25-W, 20-MHz – 6.0-GHz, GaN MMIC Power Amplifier

Cree’s CMPA0060025D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to Si and GaAs transistors. This MMIC enables very wide bandwidths.

Operating Voltage 50 V
Frequency DC - 6.0 GHz
Package Type Die
Small Signal Gain 18 dB
Typical Power (PSAT) 30 W
Breakdown Voltage High
Temperature Operation High
Size 0.157 x 0.094 x 0.004 in
Peak Output Power 25 W


Related Documents

Data Sheets Version Last Updated
1.2 18 Dec 2014
Data Sheets Version Last Updated
1.2 18 Dec 2014
RF Application Notes Version Last Updated
A 30 Apr 2012
A 30 Apr 2012
Sales Terms Version Last Updated
Technical Papers & Articles Version Last Updated
by Raymond S. Pengelly, Simon M. Wood, James W. Milligan, Scott T. Sheppard, and William L. Pribble
Design 01 Jun 2012
by Donald A. Gajewski, Scott Sheppard, Tina McNulty, Jeff B. Barner, Jim Milligan and John Palmour

This paper reports the reliability performance of the Cree, Inc., GaN/AlGaN HEMT MMIC process technology, fabricated on 100 mm high purity semi-insulating (HPSI) 4H-SiC substrates.
Design 01 May 2011